The IRFP250N 200V single N channel power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Continuous Drain Current Id:30A Drain Source Voltage Vds:200V On Resistance Rds(on):0.075ohm Rds(on) Test Voltage Vgs:10V Threshold Voltage Vgs:4V Power Dissipation Pd:214W Minimum Operating Temperature:-55 °C Maximum Operating Temperature:+175 °C Package include 5pcs*IRFP250N
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